Freescale Semiconductor LDMOS power transistor

Freescale Semiconductor has introduced what it claims is the first 50 V, 300 W LDMOS power transistor that delivers its full rated gain and power even after withstanding a load mismatch of 65:1 VSWR across all phase angles.

This ruggedness capability represents an improvement over the established RF power transistor choices for designers of defence/aerospace amplifiers, CO ₂ laser exciters, plasma generators, HF/VHF radio amplifiers, RF plastic welding amplifiers and various other industrial, medical and broadcast amplifiers.

The transistors are optimised to operate over the frequency range from 1.8 to 600 MHz.

Other features include: capable of 300 W CW or pulse operation; typical gain of 26.5 dB allows for fewer amplifier stages; available in both bolt-down and solder-down ceramic packaging; provide up to 80% drain efficiency (η _d); device can be used single-ended or in a push-pull configuration; low thermal resistance.