GaN Systems has released two 650 V E-mode gallium nitride transistors, featuring low RDS(on) of 25 mΩ, a 60 A IDS rating and GaN Systems’ Island Technology cell layout for high-current die performance and yield. The devices feature an updated design and are offered in GaNPX packaging that enables low inductance and low thermal resistance in a small package.
The GS-065-060-3-B is bottom-side cooled, while the GS-065-060-3-T is top-side cooled. Both offer low junction-to-case thermal resistance for demanding high-power applications, including solar inverters, energy storage systems, onboard chargers, uninterruptable power supplies, industrial motor drives and wireless power transfer.
Other features include: ultralow FOM; simple gate drive requirements (0 to 6 V); transient tolerant gate drive (-20/+10 V); high switching frequency (>10 MHz); fast and controllable fall and rise times; reverse conduction capability; zero reverse recovery loss; small footprint; and dual gate pads for optimal board layout.
Phone: 001 630 262 6800
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