International Rectifier dual-power MOSFET range

International Rectifier has introduced the company’s first family of radiation-hardened (RAD-Hard), dual-power MOSFETs in a compact hermetic LCC-6 surface-mount package for low-power, lightweight space applications requiring a small footprint such as satellite payload power systems.

The 60 V logic level devices are available in 2 N-channel, 2 P-channel or 1N and 1P-channel configuration co-packaged in a six-pad LCC-6 surface mount package.

The devices use the company’s R7 logic level, RAD-hard MOSFET technology that features low on-state resistance (on), fast switching and small size, making them suitable alternatives to traditional bipolar devices.

The MOSFETs are rated at 100 krad total ionising dose with 300 krad TID rating also available. Devices are single event effect rated at 85 MeV/(mg/cm²) LET and are available as commercial-off-the-shelf or screened to MIL-PRF-19500 space level.