Microsemi Corporation GaN on SiC high electron mobility transistors
Full design support capabilities have been announced for a family of gallium nitride (GaN) on silicon carbide (SiC), high electron mobility transistor (HEMT), radio frequency transistors from Microsemi Corporation.
The common source GaN on SiC transistors are internally matched for optimal performance and specifically designed for S-band radar applications, making them easier to design-in than unmatched broadband devices.
Peak output power levels range from 110 to 280 W (Class AB), with high power gain and drain efficiency across the frequency band and under pulse conditions specified with a power supply of 60 V. The devices use gold metallisation and eutectic attach to provide high reliability and good ruggedness.
Phone: 0011 1 218 681 8000
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