Infineon has released the OptiMOS 375 V MOSFET family with characteristics suitable for energy-efficient power conversion.
The devices feature reduced power losses and improved overall efficiency under all load conditions for switched-mode power supplies, as well as power applications like motor control and fast switching class D amplifiers.
With this new addition, there are now nearly 100 devices based on the N-channel OptiMOS 3 process, each providing low gate charge and low power losses.
The latest device is claimed to reduce power losses by 10%, compared with the 80 V family.
Characteristics such as the lowest temperature coefficient for R DS(on) (<0.7%/°K) results in low conduction losses at high temperatures. This reduces the need for device paralleling, allowing smaller heatsinks.
The MOSFETs are more compact. They can replace an equivalent density D2PAK device, reducing board space by 60%, lowering height by 77% (from 4.44 to 1 mm) and reducing package width by nearly half (from 10.1 to 5.15 mm).
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