MOSFET family

Infineon has released the OptiMOS 375 V MOSFET family with characteristics suitable for energy-efficient power conversion.

The devices feature reduced power losses and improved overall efficiency under all load conditions for switched-mode power supplies, as well as power applications like motor control and fast switching class D amplifiers.

With this new addition, there are now nearly 100 devices based on the N-channel OptiMOS 3 process, each providing low gate charge and low power losses.

The latest device is claimed to reduce power losses by 10%, compared with the 80 V family.

Characteristics such as the lowest temperature coefficient for R DS(on) (<0.7%/°K) results in low conduction losses at high temperatures. This reduces the need for device paralleling, allowing smaller heatsinks.

The MOSFETs are more compact. They can replace an equivalent density D²PAK device, reducing board space by 60%, lowering height by 77% (from 4.44 to 1 mm) and reducing package width by nearly half (from 10.1 to 5.15 mm).