NXP MRFX1K80H high-power RF transistor

The MRFX1K80H is a 65 V, wideband RF power LDMOS transistor from NXP Semiconductors. It is designed to deliver 1800 W CW at 65 V for applications from 1.8 to 400 MHz and capable of handling 65:1 VSWR.

Available in an air cavity ceramic package, the product is a high-ruggedness transistor designed for use in high-VSWR ISM applications, as well as radio and VHF TV broadcast, sub-GHz aerospace and mobile radio applications. Its high-input and -output design allows for wide frequency range use from 1.8 to 400 MHz.

Suitable for linear applications with appropriate biasing, the device can be used single-ended or in a push-pull configuration. It is qualified up to a maximum of 65 VDD operation and characterised from 30 to 65 V for extended power range. It offers high breakdown voltage and integrated ESD protection with greater negative gate-source voltage range for improved Class C operation, according to the company.