NXP Semiconductors AFT31150N LDMOS transistor
The AFT31150N is a 150 W peak power LDMOS transistor from NXP Semiconductors. It is designed for applications operating at frequencies between 2700 and 3100 MHz and is particularly suitable for use in pulse applications.
The transistor is characterised with series-equivalent large-signal impedance parameters and is internally matched for ease of use. It is qualified up to a maximum of 32 VDD operation, with integrated ESD protection and good negative gate source voltage range for improved Class C operation, according to the company.
The product is suitable for commercial S-band radar systems, maritime radar and weather radar applications. Additional features include: P1 dB of +51.8 dBm; power gain of 17 dB @ 3100 MHz; efficiency of 50%; and thermal resistance of 0.042°C/W.
Phone: 02 8883 4670
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