NXP Semiconductors MRF13750H/MRF13750HS RF power LDMOS transistor

The MRF13750H/MRF13750HS, available in bolt-down and solder-down styles, is an RF power LDMOS transistor from NXP Semiconductors. The 750 W continuous wave transistor is designed for industrial, scientific and medical (ISM) applications in the 700 to 1300 MHz frequency range and is capable of CW or pulse power in narrowband operations.

The transistor is internally input-matched, can be used single-ended or in a push-pull configuration and is characterised for 30 to 50 V. It is suitable for linear applications with appropriate biasing and includes integrated ESD protection.

The product offers ease of use to microwave generator designers, delivering precision and control not available with vacuum tube-era technologies such as magnetrons, according to the company. It supports power control over the full dynamic range from 0 to 750 W, enabling frequency shifting that helps make precise use of RF energy.

Additional features include: 750 W CW @ 915 MHz with 63% efficiency; 700 W CW @ 1300 MHz with 70% efficiency; an NI-1230 air-cavity ceramic package; 0.15°C/W thermal resistance; and high ruggedness, handling 10:1 VSWR.

Typical ISM applications include 915 MHz industrial heating and welding systems and 1300 MHz particle accelerators. An associated test fixture tuned to 915 MHz is available.