NXP Semiconductors MRF13750H/MRF13750HS RF power LDMOS transistor

Tuesday, 16 January, 2018 | Supplied by: Wireless Components


The MRF13750H/MRF13750HS, available in bolt-down and solder-down styles, is an RF power LDMOS transistor from NXP Semiconductors. The 750 W continuous wave transistor is designed for industrial, scientific and medical (ISM) applications in the 700 to 1300 MHz frequency range and is capable of CW or pulse power in narrowband operations.

The transistor is internally input-matched, can be used single-ended or in a push-pull configuration and is characterised for 30 to 50 V. It is suitable for linear applications with appropriate biasing and includes integrated ESD protection.

The product offers ease of use to microwave generator designers, delivering precision and control not available with vacuum tube-era technologies such as magnetrons, according to the company. It supports power control over the full dynamic range from 0 to 750 W, enabling frequency shifting that helps make precise use of RF energy.

Additional features include: 750 W CW @ 915 MHz with 63% efficiency; 700 W CW @ 1300 MHz with 70% efficiency; an NI-1230 air-cavity ceramic package; 0.15°C/W thermal resistance; and high ruggedness, handling 10:1 VSWR.

Typical ISM applications include 915 MHz industrial heating and welding systems and 1300 MHz particle accelerators. An associated test fixture tuned to 915 MHz is available.

Online: www.wirelesscomponents.com.au
Phone: 02 8883 4670
Related Products

u-blox NORA-W4 Wi-Fi 6 module

The u-blox NORA-W4 Wi-Fi 6 module is suitable for IoT applications such as smart home, asset...

STMicroelectronics TSZ151 operational amplifiers

The STMicroelectronics TSZ151 operational amplifiers are designed to lend stability to circuits...

Neousys NRU-154PoE-FT Edge AI computer

The Neousys NRU-154PoE-FT Edge AI computer delivers up to 100 TOPS AI inference performance,...


  • All content Copyright © 2024 Westwick-Farrow Pty Ltd