Plessey GaN-on-Si LED die

Plessey has announced its high-performance, high-quality and high-volume large LED die based on GaN-on-Silicon technology. The die benefits from three core features of the Plessey process: the low thermal resistance of silicon; a single-surface, emitter die design; and 6″ wafer processing. The product features a 20 mm² die design that will generate up to 5 W of blue light over a 400-480 nm wavelength range.

The large-area LED die helps users in many ways, particularly for chip-on-board (CoB) products in providing a simple, uniform light emitter while reducing die attach and wire bond overheads. The low thermal resistance of the silicon substrate makes for easy thermal management and enhanced reliability resulting from lower temperature operation. The vertical design structure has a cathode top and anode bottom contacts, which is suitable for scaling the effectiveness in applying large die.