Vishay has unveiled the first device built on its p-channel TrenchFET Gen III technology, a 20 V device with a claimed lowest on-resistance ever achieved for a p-channel MOSFET with the footprint area of an SO-8.
The Si7137DP offers an ultra-low on-resistance of 1.9 mΩ at 10 V, 2.5 mΩ at 4.5 V, and 3.9 mΩ at 2.5 V. The low on-resistance of the TrenchFET Gen III MOSFETs translates into lower conduction losses, allowing the devices to perform switching tasks with less power loss than previous p-channel power MOSFETs.
The device will be used as the adapter switch and for load switching applications in notebook computers and industrial/general systems. Adapter switches (switching between the adapter/wall power or the battery power) are always on and drawing current.
The lower on-resistance of the Si7137DP translates into lower power consumption, saving power and prolonging battery life between charges.
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