Qorvo QPA2308 60 W GaN power amplifier

Wednesday, 24 July, 2019 | Supplied by: Mouser Electronics

The QPA2308 power amplifier, from Qorvo, provides high power density and power-added efficiency for 5–6 GHz radiofrequency (RF)-based designs. Fabricated on Qorvo’s production 0.25 µm gallium nitride-on-silicon carbide (GaN-on-SiC) process, the monolithic microwave integrated circuit (MIMC) power amplifier is designed to simplify system integration and offer good performance in a compact 15.24 x 15.24 mm bolt-down package.

Engineered for commercial and military applications, the power amplifier features >60 W of saturated output power and over 21 dB of large-signal gain. The device’s power-added efficiency (PAE) is rated at greater than 47%, and the RF output power where the device starts to draw positive gate current (PSAT) is measured at 48 dBm.

Input return loss for the amplifier is specified at 14–23 dB, while the output return loss is 13 dB. To simplify system integration, the device also supplies two RF ports that are fully matched to 50Ω, each integrated with DC blocking capacitors.

The RoHS-compliant amplifier has an operating temperature of -40 to +85°C and a power dissipation of 140 W (at +85°C). It is suitable for RF applications such as C-band radars, satellite (Satcom) and space communications, and electronic warfare technologies.

Online: au.mouser.com
Phone: 0011 886 2 2799 2096
Related Products

Laird Connectivity BL654PA power amplified module

The FCC, IC, RCM, KC and Bluetooth SIG-certified module allows engineers to implement single-mode...

NXP Semiconductors S32K ISELED-enabled microcontrollers

NXP Semiconductors has released its S32K ISELED-enabled microcontrollers. ISELED is an open...

Würth Elektronik WE-STST Super Tiny Signal Transformers for LAN interfaces

Würth Elektronik's WE-STST Super Tiny Signal Transformers for LAN interfaces feature a...

  • All content Copyright © 2019 Westwick-Farrow Pty Ltd