Qorvo QPA2308 60 W GaN power amplifier

Wednesday, 24 July, 2019 | Supplied by: Mouser Electronics



The QPA2308 power amplifier, from Qorvo, provides high power density and power-added efficiency for 5–6 GHz radiofrequency (RF)-based designs. Fabricated on Qorvo’s production 0.25 µm gallium nitride-on-silicon carbide (GaN-on-SiC) process, the monolithic microwave integrated circuit (MIMC) power amplifier is designed to simplify system integration and offer good performance in a compact 15.24 x 15.24 mm bolt-down package.

Engineered for commercial and military applications, the power amplifier features >60 W of saturated output power and over 21 dB of large-signal gain. The device’s power-added efficiency (PAE) is rated at greater than 47%, and the RF output power where the device starts to draw positive gate current (PSAT) is measured at 48 dBm.

Input return loss for the amplifier is specified at 14–23 dB, while the output return loss is 13 dB. To simplify system integration, the device also supplies two RF ports that are fully matched to 50Ω, each integrated with DC blocking capacitors.

The RoHS-compliant amplifier has an operating temperature of -40 to +85°C and a power dissipation of 140 W (at +85°C). It is suitable for RF applications such as C-band radars, satellite (Satcom) and space communications, and electronic warfare technologies.

Online: au.mouser.com
Phone: 0011 886 2 2799 2096
Related Products

SCHURTER FMAD NEO three-phase mains filter with neutral line

FMAD NEO is the name of SCHURTER's latest single-stage filter family for three-phase systems...

Red Lion signal conditioners

Red Lion's range of signal conditioners is designed to boost signal strength while allowing...

Winmate IB70 and IK70 P-Cap Open Frame Panel PC Series

Winmate's IB70 and IK70 P-Cap Open Frame Panel PC Series are available in screen sizes from...


  • All content Copyright © 2019 Westwick-Farrow Pty Ltd