Qorvo QPA2308 60 W GaN power amplifier

The QPA2308 power amplifier, from Qorvo, provides high power density and power-added efficiency for 5–6 GHz radiofrequency (RF)-based designs. Fabricated on Qorvo’s production 0.25 µm gallium nitride-on-silicon carbide (GaN-on-SiC) process, the monolithic microwave integrated circuit (MIMC) power amplifier is designed to simplify system integration and offer good performance in a compact 15.24 x 15.24 mm bolt-down package.

Engineered for commercial and military applications, the power amplifier features >60 W of saturated output power and over 21 dB of large-signal gain. The device’s power-added efficiency (PAE) is rated at greater than 47%, and the RF output power where the device starts to draw positive gate current (PSAT) is measured at 48 dBm.

Input return loss for the amplifier is specified at 14–23 dB, while the output return loss is 13 dB. To simplify system integration, the device also supplies two RF ports that are fully matched to 50Ω, each integrated with DC blocking capacitors.

The RoHS-compliant amplifier has an operating temperature of -40 to +85°C and a power dissipation of 140 W (at +85°C). It is suitable for RF applications such as C-band radars, satellite (Satcom) and space communications, and electronic warfare technologies.