The QPD0011 high-electron mobility transistor (HEMT), from Qorvo, delivers power and performance for cellular base station and RF applications in 5G massive MIMO, LTE and WCDMA systems.
The gallium nitride-on-silicon carbide (GaN-on-SiC) transistor is an asymmetric, dual-path amplifier in a small, 7 x 6.5 mm DFN package. Utilising variable power inputs from 30 to 60 W and drain voltages of 48 V, the product operates between 3.3 and 3.6 GHz and features up to 13.3 dB of gain, for ultra-efficient signal, peak and power performance (up to 90 W) in Doherty design environments.
Applications include macrocell and microcell base stations, active antennas and asymmetric Doherty designs.
Phone: 0011 886 2 2799 2096
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