ROHM’s RGWxx65C series hybrid IGBTs (RGW60TS65CHR, RGW80TS65CHR and RGW00TS65CHR) feature an integrated 650 V SiC Schottky barrier diode. Qualified under the AEC-Q101 automotive reliability standard, the series is suitable for automotive and industrial applications that handle large power, such as photovoltaic power conditioners, onboard chargers and DC/DC converters used in electric and electrified vehicles (xEV).
The series utilises ROHM’s low-loss SiC Schottky barrier diodes in the IGBT’s feedback block as a freewheeling diode that has almost no recovery energy and thus minimal diode switching loss. Additionally, since the recovery current does not have to be handled by the IGBT in turn-on mode, the IGBT turn-on loss is reduced. Both effects together result in up to 67% lower loss over conventional IGBTs and 24% lower loss compared with super-junction MOSFETs when used in vehicle chargers, the company says, contributing to lower power consumption in industrial and automotive applications.
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