Semikron low-inductance 1200 V Semitrans IGBT module

Semikron has introduced its latest low-inductance 1200 V Semitrans IGBT module series for use in AC/DC converters in the 20-300 kW power range.

The modules are available with V-IGBT chips as an alternative to IGBT4 chips. The low, 15 nH inductance boasts two advantages: 50 V higher DC link voltage than other modules, due to the lower switching overvoltages and faster and softer IGBT switching that produces fewer switching losses.

In addition to the existing Semitrans modules with IGBT chips from Infineon, modules are now also available with V-IGBTs from Fuji with a 1200 V blocking voltage. These are available in three different module sizes, a total of eight different power classes and three switching topologies. The modules are available with a rated current of 150 to 600 A.

Semitrans 3 and 4 modules are low-inductance modules with an inductance of 15 nH. The typical IGBT switching speed of 5000 A/µs results in a module overvoltage of 75.