Teledyne e2v HiRel TDG650E30B and TDG650E15B GaN HEMTs

Teledyne e2v HiRel has added two ruggedised GaN power HEMTs (high electron mobility transistors) to its 650 V, high-power family of products based on GaN Systems technology.

The high-power HEMTs, TDG650E30B and TDG650E15B, deliver low current performance of 30 and 15 A respectively. They are claimed to be the highest voltage GaN power devices on the market for demanding military, avionics and space applications, making them suitable for areas like power supply, motor control and half-bridge topologies.

They come with a bottom-side cooled configuration and feature ultralow FOM Island Technology die, low-inductance GaNPX packaging, high-frequency switching of >100 MHz, fast and controllable fall and rise times, reverse current capability and more. The small-sized packaging of the devices should also benefit users designing for high power density projects.

The HEMTs are both enhancement mode GaN-on-Silicon power transistors that allow for high current, high voltage breakdown and high switching frequency while offering low junction-to-case thermal resistance for high-power applications. They are designed to deliver to the efficiency, size and power-density benefits required in critical aerospace and defence power applications.

For power devices, Teledyne e2v HiRel performs qualification and testing including sulfuric test, high altitude simulation, dynamic burn-in, step stress up to 175°C ambient, 9 V gate voltage and full temperature testing. Unlike SiC devices, the GaN HEMTs can easily be implemented in parallel to increase the load current or lower the effective R_DS(on).