Toshiba 16-die stacked NAND flash memory with TSV technology

Toshiba has announced the development of a 16-die (max) stacked NAND flash memory utilising Through Silicon Via (TSV) technology.

Stacked NAND flash memories were previously connected together with wire bonding in a package. TSV technology instead utilises the vertical electrodes and vias to pass through the silicon dies for the connection. This enables high-speed data input and output and reduces power consumption.

The technology achieves an I/O data rate of over 1 Gbps, which is said to be higher than any other NAND flash memories with a low voltage supply: 1.8 V to the core circuits and 1.2 V to the I/O circuits, and approximately 50% power reduction of write operations, read operations and I/O data transfers.

The NAND flash memory provides a suitable solution for low latency, high bandwidth and high IOPS/watt in flash storage applications, including high-end enterprise SSD.