Toshiba TW070J120B silicon carbide MOSFET

Toshiba Electronic Devices & Storage has launched the TW070J120B — a 1200 V silicon carbide (SiC) MOSFET for industrial applications that include large-capacity power supply. The SiC MOSFET is said to achieve high voltage resistance, high-speed switching and low on-resistance compared to conventional silicon (Si) IGBT products; it should therefore contribute to lower power consumption and system downsizing.

Fabricated with Toshiba’s second-generation chip design, the device realises low input capacitance, a low gate-input charge and low drain-to-source on-resistance. Compared with the GT40QR21, Toshiba’s 1200 V silicon insulated gate bipolar transistor (IGBT), it cuts turn-off switching loss by about 80% and switching time (fall time) by about 70%, while delivering low on-voltage characteristics with a drain current of 20 A or less.

Gate threshold voltage is set in the high range of 4.2 to 5.8 V, which should reduce malfunction risk (unintended turn on or off). Incorporation of a SiC Schottky barrier diode (SBD) with low forward voltage also helps to reduce power loss.

The MOSFET is designed to contribute to higher efficiency by reducing power loss in industrial applications, such as large-capacity AC-DC converters, photovoltaic inverters and large-capacity bidirectional DC-DC converters. It should also contribute to reduced equipment size.