Toshiba XPJR6604PB and XPJ1R004PB automotive power MOSFETs

Toshiba has launched two automotive 40 V N-channel power MOSFETs, XPJR6604PB and XPJ1R004PB, that use Toshiba’s new S-TOGL (Small Transistor Outline Gull-wing Leads) package with U-MOS IX-H process chips.

The MOSFETs use Toshiba’s new S-TOGL package (7.0 × 8.44 mm) which features a post-less structure unifying the source connective part and outer leads. A multi-pin structure for the source leads decreases package resistance. The MOSFETs have a range of applications for automotive equipment, including inverters, semiconductor relays, load switches and motor drives.

The combination of the S-TOGL package and Toshiba’s U-MOS IX-H process provides an on-resistance reduction of 11% against Toshiba’s TO-220SM (W) package product, which has the same thermal resistance characteristics. The new package also cuts the required mounting area by approximately 55% against the TO-220SM(W) package. Overall, the S-TOGL package realises high-density and compact layouts, reduces the size of automotive equipment and contributes to high heat dissipation.

Since automotive equipment is used in extreme temperature environments, the reliability of surface mounting solder joints is a critical consideration. The S-TOGL package uses gull-wing leads that reduce mounting stress, improving the reliability of the solder joint.

Assuming that multiple devices will be connected in parallel for applications requiring higher-current operation, Toshiba supports grouping shipment for the new products, in which the gate threshold voltage is used for grouping. This allows designs using product groups with small characteristic variation.