Triple Band Power Amp

Infineon Technologies has introduced a power amplifier module for mobile phones used in 900, 1800 and 1900 MHz networks.

The module enables users to roam between GSM, PCN and PCS networks.

With the low temperature co-fired ceramics power amplifier module CGM20GTriB, Infineon is providing a triple band module based on Infineon's GaAs-MESFET (metal-semiconductor field-effect transistor) technology and will provide high reliability.

The PA-module has a metal lid which provides excellent RF shielding which results in reduced costs for mobile phone manufacturers since this eliminates the need for an external metal-shielding in the phone itself.

The ceramic footprint of 10 x 12 mm2 integrates additional functions including a negative voltage generator with an integrated oscillator, a drain switch and a control-IC.

The output for GSM and PCN can be regulated with a positive control-voltage in the range of +0.2 and +2.5 so that only positive control signals are required to operate the PA-module.

The maximum output power of 34.5 dBm for GSM and 32.0 dBm for PCN/PCS, measured at a supply voltage of 3.2 is achieved by a minimum input power of 3 dBm.

This low input power level offers users the possibility of using either VCOs (voltage controlled oscillator) or driver stages in their applications based on selected transmit architecture.