TriQuint T1G4004532 and T1G4020036 RF GaN on SiC HEMTs

TriQuint has released its latest RF GaN on SiC power transistors. The HEMTs are suitable for military and civilian radar, professional and military radio communications, test instrumentation, wideband and narrowband amplifier and jammer applications.

The T1G4004532 is a 45 W (P3dB, at 3.3 GHz) discrete GaN on SiC HEMT that operates from DC to 3.5 GHz, offers gain of 16.5 dB (typical) at 3.3 GHz, with an operating voltage of 32 V. It is offered in flanged and flangeless packages.

The T1G4020036 is a 240 W (P3dB, at 2.9 GHz) discrete GaN on SiC HEMT that operates from DC to 3.5 GHz, offers gain of 13.1 dB (typical) at 2.9 GHz, with an operating voltage of 36 V. It is available in either a 4-lead flanged or an earless Gemini package. It is manufactured on the company’s TQGaN25HV process, which features field-plate techniques to optimise power and efficiency at high drain bias operating conditions. This optimisation is said to potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.