United Monolithic Semiconductors CHA8312-99F GaN high-power amplifier
The CHA8312-99F is a gallium nitride high-power amplifier from United Monolithic Semiconductors. It operates from 8 to 12 GHz and provides 17 W output power, 50% power added efficiency and 26 dB small signal gain.
The two-stage GaN HPA is suitable for defence applications as well as for a wide range of microwave applications and systems such as radar, test equipment and communication. The part is developed on a robust 0.15 µm gate length GaN on SiC HEMT process and is available as a bare die.
Additional features include: pout of +42.5 dBm @ +23 dBm input power; input return loss of >17 dB; output return loss of >11 dB; DC bias of 20 V @ 320 mA; and chip size of 3.99 x 3.12 x 0.07 mm.
Phone: 001 630 262 6800
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