UnitedSiC UF3N170400B7S JFET

UnitedSiC has released the UF3N170400B7S — a high-performance, Gen 3 silicon carbide (SiC), normally-on junction-gate field-effect transistor (JFET) that can be utilised by engineers for overcurrent protection circuits, DC/AC inverters, switch-mode power supplies, power factor correction modules, motor drives and induction heating applications.

The product is an ultrafast-switching, temperature-independent JFET, featuring ultralow on-resistance (R_DS(ON)) and gate charge (Q_G) along with low conduction and switching loss. The efficient voltage-controlled device has a low R_DS(ON) of just 400 mΩ at V_GS = 0 V and low intrinsic capacitance. It is suitable for current protection circuits without the need for active control or cascode operation.

The RoHS-compliant device comes in a D2PAK-7L package, is halogen- and lead-free, and operates at an extended ‑55 to +175°C temperature range.