UnitedSiC has released the UF3N170400B7S — a high-performance, Gen 3 silicon carbide (SiC), normally-on junction-gate field-effect transistor (JFET) that can be utilised by engineers for overcurrent protection circuits, DC/AC inverters, switch-mode power supplies, power factor correction modules, motor drives and induction heating applications.
The product is an ultrafast-switching, temperature-independent JFET, featuring ultralow on-resistance (RDS(ON)) and gate charge (QG) along with low conduction and switching loss. The efficient voltage-controlled device has a low RDS(ON) of just 400 mΩ at VGS = 0 V and low intrinsic capacitance. It is suitable for current protection circuits without the need for active control or cascode operation.
The RoHS-compliant device comes in a D2PAK-7L package, is halogen- and lead-free, and operates at an extended ‑55 to +175°C temperature range.
Phone: 0011 886 2 2799 2096
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