Vishay 8 V p-channel TrenchFET power MOSFET

Vishay has introduced an 8 V p-channel TrenchFET power MOSFET with what is claimed to be the lowest on-resistance ever achieved for a p-channel device in the thermally enhanced PowerPAK SC-70 2 by 2 mm footprint area.

It has an on-resistance of 16 mΩ at 4.5 V, 26 mΩ at 1.8 V, 32mΩ at 1.5 V, and 95 mΩ at 1.2 V and can handle 40% more power dissipation under the same ambient conditions.

The device is optimised for small handheld electronics and will be used for load switches in portable devices such as mobile phones, smart phones, MP3 players, digital cameras, ebooks and tablet PCs.

The lower on-resistance translates into lower conduction losses, prolonging battery life between charges. The device’s low on-resistance rating of 1.2 V is suitable for low bus voltages. Applications using a 1.2 V power bus will also benefit from the MOSFET’s low on-resistance at 1.5 and 1.8 V as power line voltages fluctuate, allowing the device to provide the best overall power savings.