Vishay SiB437EDKT TrenchFET power MOSFET

Vishay has introduced an 8 V p-channel TrenchFET power MOSFET featuring what is claimed to be the lowest on-resistance for a p-channel device in the 1.6 by 1.6 mm footprint area with a profile under 0.8 mm. In addition, the SiB437EDK is said to be the only device offering an on-resistance rating down to 1.2 V.

The MOSFET will be used for load switching in handheld devices such as smart phones, MP3 players, portable media players, digital cameras, eBooks and tablet PCs.

The compact footprint and ultra-thin 0.65 mm maximum profile of the device’s thermally enhanced Thin PowerPAK SC-75 package enable smaller, slimmer end products, while its low on-resistance translates into lower conduction losses, saving power and maximising battery run times.

The on-resistance ratings of 1.5 and 1.2 V allow the device to work with the lower-voltage gate drives and lower bus voltages common in handheld devices, without level-shifting circuitry.

The MOSFET is particularly useful when the battery charge in a handheld device is low and needs to consume as little power as possible.

It offers an ultra-low on-resistance of 34 mΩ at 4.5 V, 63 mΩ at 1.8 V, 84 mΩ at 1.5 V, and 180 mΩ at 1.2 V.

It is halogen-free in accordance with the IEC 61249-2-21 definition and compliant with RoHS Directive 2002/95/EC. The MOSFET offers typical ESD protection of 2000 V.