Würth Elektronik WE-AGDT series transformers

With the increasing spread of power semiconductor devices in SiC technology, which work at switching frequencies above 100 kHz, their gate control requirements are becoming more and more sophisticated. Würth Elektronik’s WE-AGDT series of compact transformers are available in an EP7 package and useful for demanding gate control of SiC MOSFETs.

The series allows developers to easily implement a compact, efficient and flexible supply with up to 6 W output power. The transformers feature a wide-input voltage range from 9 to 36 V, a high saturation current of 4.5 A, low leakage inductance and a low capacitance of 6.8 pF between the windings. This gives rise to high common-mode transient immunity (CMTI) of the gate driver system.

The series comprises six transformers, each optimised for its respective reference design. Due to their two separate secondary windings, they allow both bipolar (+15 V, -4 V) and unipolar (+15 to +20 V, 0 V) output voltages. The input voltage of 9 to 36 V achieves a maximum output power of 3 to 6 W. The transformers are optimised for SiC applications but are also suitable for optimally controlling IGBT and power MOSFETs and, given a suitable DC-DC converter, even for high-voltage GaN FETs.