Developing solutions for handset producers

Manufacturer of radio solutions and precision analog semiconductors, Skyworks Solutions has announced it is leveraging a bipolar field effect transistor (BiFET) process technology for its gallium arsenide (GaAs)-based products, enabling it to develop solutions for handset manufacturers.

BiFET uniquely integrates indium gallium phosphide (InGaP)-based heterojunction bipolar transistors (HBTs) with field effect transistors (FETs) on the same GaAs substrate. The addition of FETs to a high yielding InGaP/GaAs HBT process allows advanced bias control features to be embedded in the same power amplifier (PA) die, thereby eliminating the need for external bias control circuits for many applications. When coupled with other proprietary technology that extends battery life and reduces the radio frequency (RF) loss between integrated components, Skyworks is able to increase functionality and simplify designs while leveraging production costs across a suite of GaAs-based solutions, and address additional markets that require embedded analog signal processing and control functionality.

"With the development and launch of our BiFET process technology, Skyworks is delivering performance advantages in GaAs that support high-volume wireless applications," said Steven C. Machuga, vice president of RF front-end development for Skyworks' Mobile Platforms' business. "At a higher level, BiFET represents yet another breakthrough technology developed by Skyworks, enabling higher levels of device integration and allowing our users to differentiate their platforms through considerable reductions in both time-to-market and cost."