RECOM RP-xx06S and RxxP06S DC/DC converters for fast-switching GaN drivers

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RECOM has developed two isolated 1 W DC/DC converter series, RP-xx06S and RxxP06S, offering an output voltage of 6 V, which is sufficient to efficiently switch GaN HEMTs without causing a gate dielectric breakdown.

The high slew-rate GaN transistor drivers require isolated 6 V supplies with high isolation voltage and low isolation capacitance. Typically, a safe DC/DC isolation voltage should be at least twice the working voltage, but the high ambient temperature and fast switching edges generated by these high-power transistors cause additional stress to the insulation barrier. Therefore, the internal transformer design of the converters uses a pot-core to physically separate the input and output windings providing up to 6.4 kVDC isolation to ensure that the isolation barrier stands up to even the harshest operating conditions.

Despite the high isolation grade, the converters still fit into an industry-standard SIP7 case, thus saving valuable space on the circuit board. They are available with input voltages of 5, 12, 15 or 24 V and feature a low isolation capacitance (<10 pF). They are IEC/EN-60950-1 certified and fully compliant to RoHS2 and REACH.

For certain GaN applications, where higher noise and transients have to be accommodated into the design, RECOM also offers converters with 9 V output, which can be split via a Zener diode circuit to 6 V and -3 V to provide a negative switching gate voltage as well.

For more information: https://www.recom-power.com/en/asia/news/news-detail/news/gan.html.