Cree RF power amplifiers and switches

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The CMSA30025S from Cree RF is claimed to be the first GaN MMIC SPDT switch to operate over the 300 MHz to 3 GHz range with less than 0.7 dB insertion loss, 30 dB isolation and less than 20 nec switching speed.

RF power handling capability is 25 W CW at only 0.1 dB compression with an output intercept point higher than 60 dBm. The demonstration will show the QFN version of the switch in a test fixture with driver under ‘hot switching’ conditions.

The company’s CMPA0060025F is a packaged GaN MMIC power amplifier operating from below 10 MHz to 6 GHz with typical saturated output power greater than 25 W CW and power gain of 12 dB. The distributed amplifier has typical drain efficiencies of 40% and is packaged within a 3.2 cm² footprint.

The CMPA2735075F is said to be the first of a family of radar-centric packaged MMIC power amplifiers. Demonstrated in its evaluation fixture, this amplifier provides 75 W of pulsed RF power (pulse widths of 300 µs typical at 10% duty cycle) with an accompanying power gain of 20 dB over the 2.7 to 3.5 GHz frequency range. The 50 Ω (in/out) matched MMIC typically provides 55% power added efficiency (PAE).

Moving up in power level, the company’s CGH35240F is a fully internally matched, 50 Ω power transistor employing GaN on SiC technology for good thermal management and reliability.

The packaged transistor provides a saturated output power of greater than 220 W with accompanying power gain of greater than 11 dB over the 2.9 to 3.5 GHz frequency range with typical PAE of 60%.