MOSFET chipset

Developed using the latest HEXFET MOSFET silicon technology and IR's DirectFET packaging technology, the IRF6712S control FET and IRF6716M sync FET are characterised with low package inductance and device on-state resistance, gate charge and gate-to-drain charge to achieve high efficiency and thermal performance for high-current DC-DC converters.

With low typical RDS(on) of only 1.2 mW at 10 VGS and 2.0 mW at 4.5 VGS, the IRF6716M achieves the lowest on-state resistance for a 25 V device, making it suitable for synchronous rectifier sockets for high-frequency, high-current DC-DC converters used in applications that power high-current loads.

The device features a 0.7 mm profile and the MX pad outline common to two generations of devices. Optimised for high-current applications where a single control MOSFET is desired, the IRF6712S achieves a low gate charge (Qg) of 13 nC and gate-to-drain charge (Qgd) of 4.4 nC combined with low typical on-state resistance of 3.8 mW at 10 VGS and 6.7 mW at 4.5 VGS.

The IRF6712S also presents a 0.7 mm profile and the SQ pad outline common to two generations of control devices, allowing migration from existing low-voltage MOSFETs.