Cree KIT8020CRD8FF1217P-1 SiC MOSFET evaluation kit

Cree has released the KIT8020CRD8FF1217P-1, a SiC MOSFET evaluation kit. Used to demonstrate the high performance of the company’s 1200 V SiC MOSFETs and SiC Schottky diodes, the kit includes two C2M0280120D Cree SiC 1200 V, 80 mΩ, TO-247-3 MOSFETs; two C4D20120D Cree SiC 1200 V, 20 A, TO-247-3 Schottky diodes; an evaluation board with an Avago gate driver; a compatible heatsink; all mounting hardware; and a user manual.

The kit can be easily configured for several topologies, such as basic phase-leg configurations. The evaluation board may be used to evaluate the SiC MOSFET performance during switching events and steady-state operation; to configure different topologies with SiC MOSFETs and SiC diodes; to perform functional testing with SiC MOSFETs (eg, double-pulse test to measure switching losses); as a PCB layout example for driving SiC MOSFETs and SiC diodes; and as a gate-drive reference design for a TO-247 SiC MOSFET.