GaN foundry services
RF Micro Devices says it has formed a gallium nitride (GaN) foundry services business unit to supply high-reliability, high-performance and price-competitive GaN semiconductor technology into multiple RF power markets.
The unit will minimise the time between initial wafer order and final delivery.
Applications expected to benefit from RFMD GaN include commercial and defence power applications including wireless infrastructure, CATV line amplifiers, broadband communication, power amplifiers and various radar systems.
Additionally, users gain access to a support team with first-hand knowledge of foundry users' expectations and requirements. RFMD's Foundry Services support team combines more than 50 years of foundry services experience, both as foundry customers and foundry suppliers.
RFMD GaN is a next-generation compound semiconductor technology that delivers high power density and breakdown voltage and is suitable for very high-performance power devices.
Typical operating characteristics of RFMD GaN include operating voltages of 48 (or 65), power density of 6 to 8 W/mm, FTs of 11 GHz and F max of 18 GHz and MTTF greater than 108 hours at 150°C T channel operation.
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