STMicroelectronics MasterGaN4 power packages

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The STMicroelectronics MasterGaN4 power packages integrate two symmetrical 650 V gallium nitride (GaN) power transistors with 225 mΩ R_DS(on) alongside optimised gate drivers and circuit protection to simplify the design of high-efficiency power-conversion applications up to 200 W.

The package is designed to simplify design using wide-bandgap GaN power semiconductors by taking away the complex gate-control and circuit-layout challenges. With inputs tolerant of voltages from 3.3 to 15 V, the packages can be controlled via direct connection to Hall-effect sensors or a CMOS device such as a microcontroller, DSP or FPGA.

Leveraging the higher operating frequencies enabled by the high switching performance of GaN transistors, as well as their increased efficiency that reduces thermal dissipation, designers can choose small magnetic components and heatsinks to build compact and lightweight power supplies, chargers and adapters. The packages are suited to use in symmetrical half-bridge topologies as well as soft-switching topologies such as active clamp flyback and active clamp forward.

The wide supply voltage range, from 4.75 to 9.5 V, allows convenient connection to an existing power rail. Built-in protection further simplifies design, including gate-driver interlocks, low-side and high-side under-voltage lockout (UVLO), and over-temperature protection. There is also a dedicated shutdown pin.

ST is also introducing a dedicated prototype board (EVALMASTERGAN4) that provides a complete set of features to drive the MasterGaN4 with a single or complementary driving signal. An adjustable deadtime generator is also provided. The board gives users the flexibility to apply a separate input signal or PWM signal, insert an external bootstrap diode, separate the logic and gate-driver supply rails, and to use a low-side shunt resistor for peak-current-mode topologies.

For more information: www.st.com/gatedrivers.