STMicroelectronics PWD13F60 full-bridge system in package

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STMicroelectronics’ PWD13F60 system in package (SiP) contains a complete 600 V/8 A single-phase MOSFET full bridge in a 13 x 11 mm outline. It is said to save bill-of-materials costs and board space in industrial motor drives, lamp ballasts, power supplies, converters and inverters.

With a footprint 60% smaller than a comparable circuit built from discrete components, according to the company, the PWD13F60 can boost end-application power density. By integrating four power MOSFETs, it presents an efficient alternative to other modules on the market that are typically dual-FET half-bridge or six-FET three-phase devices. Unlike either of these choices, only one SiP is needed to implement a single-phase full bridge, leaving no internal MOSFETs unused. There is also flexibility to configure the module as one full bridge or two half bridges.

Leveraging ST’s high-voltage BCD6s-Offline fabrication process, the SiP integrates gate drivers for the power MOSFETs and the bootstrap diodes needed for high-side driving, which simplifies board design and streamlines assembly by eliminating external components. The gate drivers are optimised for switching and low EMI (electromagnetic interference). The product also features cross-conduction protection and undervoltage lockout, which helps further minimise footprint while ensuring system safety.

Further attributes include a wide supply-voltage range, extending down to 6.5 V for maximum flexibility, and simplified design. In addition, the SiP inputs can accept logic signals from 3.3 to 15 V to ensure easy interfacing with microcontrollers (MCUs), digital signal processors (DSPs) or Hall sensors.

For more information: www.st.com/pwd13f60-pr.