STMicroelectronics STPOWER third-generation SiC MOSFETs

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STMicroelectronics introduces its third generation of STPOWER silicon-carbide (SiC) MOSFETs, designed to advance the state of the art in power devices for electric-vehicle (EV) powertrains and other applications where power density and energy efficiency are important target criteria.

The SiC devices are optimised for high-end automotive applications including EV traction inverters, onboard chargers (OBCs) and DC/DC converters, as well as e-climate compressors. The latest generation also suits industrial applications by boosting the efficiency of motor drives, renewable-energy converters and storage systems, as well as telecom and data-centre power supplies. Devices with nominal voltage ratings from 650 and 750 V up to 1200 V will be available, giving more choices for designers to address applications operating from ordinary AC-line voltages up to those of high-voltage EV batteries and chargers.

SiC MOSFETs have a high voltage rating in relation to their die size, compared to silicon alternatives, making the technology suitable for EV applications and fast-charging EV infrastructures. In addition, they benefit from a fast intrinsic diode that delivers the bidirectional properties needed for automotive OBCs used in vehicle-to-X (V2X) power flow allowing the transmission of electricity from an OBC battery to the infrastructure. Moreover, their high frequency capability allows small passive components within power systems, which permit compact and lightweight electrical equipment in the vehicle.

For more information: www.st.com/sic-mosfets.