STMicroelectronics STripFET F7 MOSFETs

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STMicroelectronics has launched two 40 V automotive-qualified MOSFETs featuring STripFET F7 technology, which combines good switching performance and energy efficiency with low emitted noise and high immunity to false turn-on. Key applications for the devices, with current ratings up to 120 A, include high-current powertrain, body or chassis and safety systems. The switching characteristics make them suitable for use in motor drives such as in electric power steering (EPS).

STripFET families use DeepGATE technology to achieve low R_DS(on) per die area and low R_DS(on)x gate charge (Qg), giving high energy efficiency in familiar power packages. High avalanche ruggedness is another feature.

The technology enhances switching performance and maximises energy efficiency by lowering the body-diode reverse-recovery charge (Q_rr) and reverse-recovery time (t_rr), while softer recovery minimises electromagnetic interference (EMI) thereby easing demand for filtering components. Optimised device capacitances increase noise immunity, relieving the need for snubber circuitry, and threshold-voltage tuning ensures high false turn-on immunity without requiring a dedicated gate driver. In bridge circuits like motor drives, the soft diode recovery helps prevent shoot-through currents.

The STL140N4F7AG and STL190N4F7AG are qualified to AEC-Q101 in the PowerFLAT 5x6 package with wettable flanks. The compact footprint and 0.8 mm profile enable high system power density, while the flank design aids solder-joint reliability and lifetime as well as allowing 100% automatic optical inspection.

For more information: www.st.com/stripfetf7.