Researchers develop a new method for manufacturing a-IGZO

Friday, 27 June, 2014

Binghampton University researchers have developed a new method for manufacturing amorphous indium gallium zinc oxide (a-IGZO), a ceramic that looks like glass and can behave like metal, or even like silicon.

Companies such as Sharp and LG already use a-IGZO in some high-end displays. It’s also found in Apple’s new iPad Air. But it has been difficult to maintain transparency and conductivity: in some samples, Piper said, the material took on a brown or yellow tinge that would harm the display’s performance.

Louis Piper and his team’s research focuses on metal oxides, a class of materials that includes some of the best insulators as well as some of the best conductors in use today. Their research is said to improve the quality of flexible, conductive, transparent glass.

Creating a more reliable production process for a-IGZO will save electronics manufacturers money. It could also reduce energy use as a fully transparent display can take advantage of ambient light and does not require as much backlighting.

Using X-ray photoelectron spectroscopy to examine the chemical composition and electronic structure of a-IGZO, Piper and his colleagues tested 50 samples, each about a centimetre square and a micron thick. Previous studies have worked with fewer than five samples; this larger effort enabled the physicists to observe trends and conduct data analysis.

The surprising finding of these elaborate experiments was: the deep subgap feature, which caused the discolouration in the material, is the result of local variation in oxygen coordination, rather than oxygen vacancies. “There was a lot of detective work,” Piper said. “Several models had suggested missing oxygen played an important role, but our data showed otherwise.”

Eventually, computations conducted by theorists at the University of Bath backed up the experimental findings from Binghamton: oxygen that has too few positive metal ions surrounding it seems to be the cause of the subgap.

The team not only identified the reason for the subgap feature, it also developed a way to resolve the problem. Low-temperature annealing - heating at 199° C - allows a-IGZO to retain its conductive properties but removes the subgap states, Piper said.

Related News

Fully coupled annealing processor for enhanced problem solving

Researchers have designed a scalable, fully-coupled annealing processor with 4096 spins, and...

STMicroelectronics breaks 20 nm barrier for next-gen microcontrollers

STMicroelectronics has launched an advanced process based on 18 nm Fully Depleted Silicon On...

Chip opens door to AI computing at light speed

A team of engineers have developed a silicon-photonics chip that uses light waves, rather than...


  • All content Copyright © 2024 Westwick-Farrow Pty Ltd