Transistor lights the way
Researchers at the University of Illinois at Urbana-Champaign have developed the world's first light emitting transistor (LET).
Unlike conventional transistors, which include an electrical input port and an electrical output port, the new LET also has an infrared optical output port.
The LET is built of indium gallium phosphide and gallium arsenide, rather than the silicon and germanium used in many conventional transistors.
Although the LET produces light in essentially the same way that light emitting diodes operate, the transistor can modulate light at much higher speeds.
So far, the researchers have managed to modulate the output at 1 MHz, but much higher speeds are theoretically possible.
Gallium-doped transistors boost computing power
Researchers have deposited gallium-doped indium oxide one atomic layer at a time to build a tiny...
New model to boost performance of OLEDs
Researchers have developed a new analytical model detailing the kinetics of the exciton dynamics...
Advantech introduces systems pre-configured with Ignition Edge
Advantech Australia has announced an alliance with Inductive Automation to introduce a series of...
