Advanced Photonix silicon photodiodes

Advanced Photonix’s UV enhanced silicon photodiode offers a high-performance solution for applications requiring sensitive devices in the UV region. The device features low noise, high shunt resistance and good response with an active area diameter of 2.54 mm.

The company’s red enhanced P-I-N and quadrant silicon photodiodes are meanwhile available in various features and packages for a wide range of applications. The devices feature a large active area and low crosstalk, useful for nulling, centring or measuring small positional changes.

Finally, the company’s blue enhanced P-I-N photodiodes offer high responsivity, large active area and low noise. They are suitable for high-speed response applications in the blue region of the electromagnetic spectrum.