Alliance Memory AS4C512M16D3L CMOS DDR3L SDRAM

Alliance Memory has introduced a monolithic high-speed, low-voltage CMOS double data rate 3 synchronous DRAM (DDR3L SDRAM) with an 8 Gb density in the 96-ball, 9 x 14 mm, lead-free FBGA package. Featuring silicon provided by Micron Technology, the AS4C512M16D3L offers a double data rate architecture for fast transfer rates of up to 1600 Mbps/pin and clock rates of 800 MHz.

With minimal die shrinks, the single-die device provides a drop-in, pin-for-pin-compatible replacement for a number of solutions used in conjunction with newer-generation microprocessors for industrial, medical, networking, telecom and aerospace applications, eliminating the need for redesigns and part requalification. It is suitable for users who require increased memory yet face board space constraints.

The unit operates from a single 1.35 V power supply and is available with a commercial temperature range of 0 to +95°C and an industrial temperature range of -40 to +95°C. It is internally configured as eight banks of 512M x 16 bits.

The product offers fully synchronous operation and provides programmable read or write burst lengths of 4 or 8. An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence. Refresh functions include auto- or self-refresh, and a programmable mode register allows the system to choose the most suitable modes to maximise performance.