International Rectifier has introduced the IRF6718 DirectFET MOSFET.
The 25 V device is claimed to have the lowest on-state resistance (RDS(on)) and is optimised for DC switch applications such as active ORing, hot swap and electronic fuse.
The device has IR’s latest-generation silicon technology in a large can DirectFET package to deliver a low RDS(on) of 0.5 mΩ at 10 V Vgs in a 60% smaller footprint and 85% lower profile than a D2PAK.
The device reduces conduction losses associated with the pass element to improve the efficiency of the entire system.
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