Diodes has launched a range of N- and P-channel MOSFETs in low-profile DFN2020-6 packages. With an offboard height of 0.4 mm and a footprint of 4 mm2, the DFN2020H4 packaged DMP2039UFDE4, a -25 V rated P-channel device, is said to be 50% thinner than similar devices.
The other MOSFETs in the series are provided in the 0.5 mm high DFN2020E package, which is claimed to be 20% thinner than the common 0.6 mm high alternatives.
Targeted at load-switching applications, the DMP2039UFDE4 also provides circuit designers with 3 kV protection against human-borne electrostatic discharge.
The MOSFETs’ low typical RDS(on), for example is 13 mΩ at a VGS of 4.5 V for the -12 V P-channel DMP1022UFDE, which means conduction losses can also be minimised in battery-charging applications.
The 20 V N-channel DMN2013UFDE makes a suitable load switch or high-speed switch in DC/DC buck and boost converters and also has a high 2 kV ESD protection rating.
Operating at a VDS of 60, the DMN6040UFDE is one of the first high-voltage MOSFETs to be introduced in the DFN2020 package and suits small form-factor industrial and HVAC controls.
Suitable for smartphones, tablets and digital cameras, the initial series of nine MOSFETs comprises -12, -20, -25 and -40 V P-channel and 12, 20 and 60 V N-channel parts.
Phone: 03 9262 0600
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