Infineon General-Purpose MOSFETs for power conversion applications
Mouser Electronics, Inc. offers a range of general-purpose MOSFETs from Infineon Technologies. For designers seeking MOSFETs to help meet project, pricing or logistical requirements, Infineon’s portfolio of high-voltage and low-voltage MOSFETs is designed to deliver flexibility, value and adaptability for a variety of applications.
The general-purpose MOSFETs are available from Mouser Electronics in both low-voltage versions for designs up to 250 V or high-voltage options for designs from 500 to 900 V. The low-voltage MOSFETs include a range of single and dual N- and P-channel devices with drain-source breakdown voltages ranging from 20 to 600 V. The drain-source resistance for these devices is rated at 1.1 mΩ to 30Ω, and the continuous drain current ranges from 100 mA to 260 A. These low-voltage MOSFETs have an operating temperature range from -55 to +175°C and are AEC-Q101 qualified.
The high-voltage MOSFETs feature drain-source breakdown voltages ranging from 500 to 900 V, a drain-source resistance from 77 mΩ to 4.68Ω, and a continuous drain current ranging from 1 to 54.9 A. The minimum operating temperature for these devices goes as low as -40°C and power dissipation ranges from 5 to 500 W.
The MOSFETs are available in a range of package options, including SOT-23, PQFN, SuperSO8, TO-252 (DPAK), SOT-223 and TO-220. All of the devices are also supported by Infineon’s online design tools, simulation models and product support documentation.
Suitable for a range of power conversion and management applications, these general-purpose MOSFETs can be integrated into designs that require reverse battery protection capabilities, switching power between alternate sources, or the powering down of unrequired loads. Target applications include switchmode power supplies, chargers and adapters, lighting, TV power supplies, server/telecom devices, battery-powered applications, motor control and drives, and battery management systems.
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