Infineon LTE low-noise amplifiers (LNAs) and Quad LNA banks

Infineon Technologies has introduced a series of LTE low-noise amplifiers (LNA) and Quad LNA banks designed to enhance the data rate in smartphones. LTE is a standard for wireless communication that allows for data rates up to 300 Mbps. However, meeting user expectations for high data rates in LTE is challenging in today’s mobile devices.

Infineon’s BGA7x1N6 and BGM7xxxx4L12 families provide low-noise figure, the exact gain and high linearity needed to help smartphone designers overcome various challenges. The products are based on the company’s SiGe (Silicon Germanium) chip technology and include built-in ESD protection.

The LNAs and LNA banks are located in both the diversity and main antenna path of the phone in order to increase system sensitivity and assure a positive user experience. They allow for data rates that are up to 96% higher than in solutions without LNAs. High linearity of the series assures optimal signal reception even in conditions of poorly isolated antenna and long line losses between antenna and transceiver.

The typical sensitivity improvement of 3.4 dB compared to systems without LNAs is achieved in devices with a package size 70% smaller (1.1 x 0.7 mm) than previously available LNAs and 61% smaller (1.9 x 1.1 mm) than previously available LNA banks.

Infineon offers three LTE LNAs and seven Quad LNA bank families to address the required band configurations for different world regions. Each letter in the series denotes a different frequency band (L for the low, 0.7 to 1.0 GHz band; M for mid, 1.7 to 2.2 GHz band; and H for high, 2.3 to 2.7 GHz band). The devices are shipped in ROHS-compliant TSNP-6-2 or TSLP 12-4 plastic packages.