MACOM MABC-001000-DP000L GaN bias controller/sequencer module

The MACOM MABC-001000-DP000L is a gallium nitride bias controller/sequencer module that provides proper gate voltage and pulsed drain voltage biasing for a device under test (DUT).

The module offers protection and dynamic control of all MACOM high-power transistors, including its GaN portfolio. It also provides bias sequencing so that pulsed drain voltage cannot be applied to a DUT unless the negative gate bias voltage is present.

The module can be implemented for fixed negative gate biasing with pulsed drain biasing, and for pulsed negative gate biasing with pulsed drain biasing. Both applications will recommend the external circuitry and P-channel power MOSFET.

The module consists of two functional elements arranged vertically to conserve size and cost. The first functional element (drain switching) is patterned and populated directly onto the board, while the second element (gate switching) connects vertically through the first functional element.

Additional features include: robust GaN protection at any power-up/power-down sequence; open drain output current of ≤200 mA for external MOSFET switch drive; internal thermistor or external temperature sensor voltage for gate bias sum; 30 dB typical EMI/RFI rejection at all I/O ports; 6.60 x 22.48 mm² package with 1 mm pitch SMT leads; target ≤500 ns total switch transition time; and gate bias output current ≤50 mA for heavy RF compression.