Microchip Technology 3.3 kV SiC power devices

System designers of traction power units (TPUs), auxiliary power units (APUs), solid-state transformers (SSTs), industrial motor drives and energy infrastructure solutions require high-voltage switching technology to increase efficiency, reduce system size and weight and enhance reliability. Microchip Technology has expanded its SiC portfolio with the release of the 3.3 kV SiC MOSFETs and SiC SBDs, enabling designers to take advantage of their ruggedness and performance. Designers should thus be equipped with the tools to develop smaller, lighter and more efficient solutions for electrified transportation, renewable energy, aerospace and industrial applications.

Many silicon-based designs have reached their limits in efficiency improvements, system cost reduction and application innovation. While high-voltage SiC provides an alternative to achieve these results, until now the availability of 3.3 kV SiC power devices was limited. Microchip’s 3.3 kV MOSFETs and SBDs join the company’s comprehensive portfolio of SiC solutions that include 700, 1200 and 1700 V die, discretes, modules and digital gate drivers.