ON Semiconductor has introduced six N-channel Metal Oxide Semiconductor Field Effect Transistors (MOSFETs). The NTMFS4Hxxx and NTTFS4Hxxx series of MOSFETs are suitable as switching devices in a wide range of applications including server and networking equipment and high-power density DC-DC converters, or to support synchronous rectification in point-of-load (PoL) modules. Versions are available with or without an integrated Schottky diode that can help engineers achieve high efficiency.
The company has optimised the design, materials and packaging of the power MOSFETs to reduce energy losses. RDSon performance of 0.7 mΩ and low-input capacitance of 3780 pF ensure conduction, switching and driver losses are minimised. Careful consideration has also been given to ensure that the MOSFETs offer good thermal performance and low package resistance and inductance.
Phone: 1300 656 636
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