ON Semiconductor STK55xU3xxx-E integrated power modules

Saturday, 19 July, 2014 | Supplied by: Future Electronics


ON Semiconductor has expanded its high-voltage IPM portfolio with the STK55xU3xxx-E family. With a power range of 10 to 50 A in SIP and DIP packaging, the IPMs integrate a complete three-phase inverter including the gate drive circuit. The company’s latest IGBT and driver technologies are incorporated into the IPMs, minimising switching losses of the module.

The modules are based on the Insulated Metal Substrate Technology (IMST), which is said to exhibit many benefits over existing standard frame types, including good thermal coupling and response, low power losses, fast temperature monitoring and reduced switching surges. IMST enables assembly of discrete passive components (resistors, capacitors), discrete active components (diodes, transistors) and more complex devices (gate drivers, DSPs logic) into high integrated modules.

Online: www.futureelectronics.com
Phone: 03 9262 0600
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