RF5602 power amplifier

RF Micro Devices has introduced the RF5602 high-power, high-efficiency and high-linearity power amplifier.

It is a 2 GHz device designed for medium power applications including consumer premises equipment and access point applications for Wi-Fi and WiMAX.

Manufactured using an indium gallium phosphide (InGaP) heterojunction bipolar transistor semiconductor process, the amplifier is optimised for use as the final RF amp in 802.16 e/d and 802.11 b/g/n applications.

It is also applicable for 2.4 GHz ISM band applications, PCS communications systems and WiBro 2.3 to 2.4 GHz applications.

The device provides strong linearity and delivers 2% EVM at 26 dBm output 5.0 V, 2% EVM at 25 dBm output 4.2 V and 3% EVM at 23.5 dBm output 3.3 V.

Additional technical features include: 3.3 to 5 V supply, integrated input power detector on die, 32 to 34 dB small signal gain.