Renesas Electronics NESG7030M04 SiGe:C heterojunction biopolar transistor

A SiGe:C heterojunction bipolar transistor, the NESG7030M04, has been released for use as a low-noise amplifier transistor for wireless LAN systems, satellite radios and similar applications.

The device uses a process that adopts newly developed silicon-germanium: carbon materials and achieves low-noise performance.

The transistor amplifies a weak microwave signal received wirelessly to an appropriate level and achieves a noise figure of 0.75 dB, which is the top level for the 5.8 GHz band used by wireless LANs and other applications.

The company has developed a process that uses SiGe:C materials for even lower noise and to provide solutions for the 12 GHz and higher frequencies used in satellite broadcasting.

Based on this process, the company has developed and is now releasing the NESG7030M04 SiGe:C HBT device that achieves stable performance over a wide frequency range from a few MHz to the 14 GHz band.

The device also achieves a gain at the minimum noise figure of 14.0 dB. This allows communication sensitivity to be increased or signal transmission errors to be reduced and the new device can achieve equivalent performance to earlier company products at ¼ the power consumption.

The company optimised the collector-base profile to guarantee a withstand voltage rating of 4.3. This increases the range of supply voltages that can be used and makes stable operation possible over a wide frequency range. It can support all ISM band applications, including smart grid, smart meter and home area network (HAN) applications.