Richardson RFPD TriQuint Semiconductor TGA2576-FL 30 W GaN power amplifier
The TriQuint Semiconductor TGA2576-FLis a 30 W GaN packaged wideband power amplifier fabricated on TriQuint’s production-released 0.25 µm GaN on SiC process.
Operating from 2.5 to 6 GHz, the device achieves 45.5 dBm saturated output power, 35% PAE and 26 dB small signal gain. Fully matched to 50 Ω and with integrated DC blocking caps on both I/O ports, the TGA2576-FL is suited to support both commercial and defence-related applications.
Other key featured include bias values of: Vd = 30 V, Idq = 1.55 A, Vg = -3.3 V, and dimensions of 11.4 x 17.3 x 3.0 mm.
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